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High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSA 10N60B2D1 IXSP 10N60B2D1
VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V
D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body t = 10s Md Weight Mounting torque (TO-220) TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 82 Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125C RG = 150 , non repetitive TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C Maximum Ratings 600 600 20 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A A s W C C C C C g Features * International standard packages * Guaranteed Short Circuit SOA capability * Low VCE(sat) - for low on-state conduction losses * High current handling capability * MOS Gate turn-on - drive simplicity * Fast fall time for switching speeds up to 20 kHz Applications * AC motor speed control * Uninterruptible power supplies (UPS) * Welding Advantages * High power density
GC E C (TAB) G E C (TAB)
TO-263 (IXSA)
TO-220AB (IXSP)
G = Gate E = Emitter
C = Collector TAB = Collector
1.3/10 Nm/lb. in 2
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4.0 7.0 75 200 100 2.5 V A A nA V
VGE(th) ICES IGES VCE(sat)
IC
= 750 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 10A, VGE = 15 V
DS99193A(10/04) (c) 2004 IXYS All rights reserved
IXSA 10N60B2D1 IXSP 10N60B2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.0 3.6 400 VCE = 25 V, VGE = 0 V f = 1 MHz 50 11 17 IC = 10A, VGE = 15 V, VCE = 0.5 VCES 6 7.5 Inductive load, TJ = 25C IC = 10A, VGE = 15 V VCE = 0.8 VCES, RG = 30 Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30 30 180 165 430 30 Inductive load, TJ = 125C IC = 10 A, VGE = 15 V VCE = 0.8 VCES, RG = 30 Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG TO-220 30 0.32 260 270 790 750 S pF pF pF nC nC nC ns ns ns ns J ns ns mJ ns ns J 1.25 K/W 0.25 K/W
Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-220 AB (IXSP) Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS
IC = 10A; VCE = 10 V, Note 1
TO-263 (IXSA) Outline
Reverse Diode (FRED) Symbol VF IRM trr trr RthJC Test Conditions IF = 10A, VGE = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ =150C TJ = 100C TJ = 100C 1.5 90 25 1.66 2.66 V V A ns ns 2.5 K/W
IF = 12A, VGE = 0 V, -diF/dt = 100 A/s VR = 100 V IF = 1 A; -di/dt = 100 A/s; VR = 30 V
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
Note 1: Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXSA 10N60B2D1 IXSP 10N60B2D1
Fig. 1. Output Characte ristics @ 25 C
20 18 16 14 25 13V 15V VGE = 17V 15V 35 VGE = 17V 30
Fig. 2. Extended Output Characte ristics @ 25 C
I C - Amperes
12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5
I C - Amperes
20 15 10 13V
11V
11V 9V
9V
5 0 4 4.5
V C E - Volts Fig. 3. Output Characteristics @ 125 C
20 18 16 VGE = 17V 15V 2.2 2.0
0
1
2
3
V C E - Volts
4
5
6
7
8
9
10
Fig. 4. Dependence of V CE(sat) on Tem perature
VGE = 15V I C = 20A
I C - Amperes
14 12 10 8 6 4 2 0 0.5 1 1.5 2 11V 9V 13V
VC E (sat)- Normalized
1.8 1.6 1.4 1.2 1.0 0.8
I C = 10A
I C = 5A
7V 0.6 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150
V CE - Volts
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
18
Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
7 TJ = 25C 6 I C = 20A 10A 5A 16 14
VC E - Volts
5
I C - Amperes
12 10 8 6 4 TJ = 125C 25C -40C
4 3
2
2 0 10 11 12 13
1
V G E - Volts
14
15
16
17
18
19
6
7
8
9
10
11
12
13
14
V G E - Volts
IXSA 10N60B2D1 IXSP 10N60B2D1
Fig. 7. Trans conductance
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 18 20 TJ = -40C 25C 125C 2.4 2.2 2 I C = 20A
Fig. 8. Dependence of Turn-off Ene rgy Loss on RG
E o f f - milliJoules
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 400 450 500 I C = 5A TJ = 125C VGE = 15V VCE = 480V I C = 10A
g f s - Siemens
I C - Amperes Fig. 9. Dependence of Turn-Off
1.8 1.6 1.4
R G - Ohms Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature
2.0 1.8 1.6 R G = 30 VGE = 15V VCE = 480V I C = 20A
Energy Los s on IC
R G = 30 VGE = 15V TJ = 125C
E o f f - milliJoules
E o f f - MilliJoules
1.2 1.0 0.8 0.6 0.4 0.2 0.0 4
VCE = 480V
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
I C = 10A
TJ = 25C
I C = 5A 25 35 45 55 65 75 85 95 105 115 125
6
8
I C - Amperes
10
12
14
16
18
20
TJ - Degrees Centigrade Fig. 12. Depe ndence of Turn-off Sw itching Tim e on IC
340 320
Fig. 11. Dependence of Turn-off
700
Sw itching Tim e on RG td(off) Switching Time - nanoseconds tfi - - - - - TJ = 125C VGE = 15V VCE = 480V I C = 10A I C = 20A I C = 5A
Switching Time - nanoseconds
650 600 550 500 450 400 350 300 250 200 150 0
300 280 260 240 220 200 180 160 140 120 TJ = 25C TJ = 125C
td(off) tfi - - - - - R G = 30 VGE = 15V VCE = 480V
I C = 5A 50 100 150 200 250 300 350 400 450 500 550
R G - Ohms
4
6
8
I C - Amperes
10
12
14
16
18
20
IXSA 10N60B2D1 IXSP 10N60B2D1
Fig. 13. Depe nde nce of Turn-off Sw itching Tim e on Tem pe rature
340 320 16
Fig. 14. Gate Charge
td(off) tfi - - - - - R G = 30 VGE = 15V VCE = 480V
Switching Time - nanoseconds
I C = 20A 5A
300 280 260 240 220 200 180 160 140 120 25
14 12
VCE = 300V 0A I C= 1 0mA I G= 1
VG E - Volts
105 115 125
10 8 6 4 2 0
I C = 5A 20A I C = 10A
35
45
TJ - Degrees Centigrade
55
65
75
85
95
0
2
4
6
8
10
12
14
16
18
Q G - nanoCoulombs Fig. 16. Reve rs e-Bias Safe Operating Are a
22 20
Fig. 15. Capacitance
1000
Capacitance - p F
C ies 100
18 16
I C - Amperes
14 12 10 8 6 TJ = 125C R G = 82 dV/dT < 10V/ns
C oes 10 C res f = 1 MHz 1 0 5 10 15
4 2 0
V C E - Volts
20
25
30
35
40
100 150
200 250 300
350 400 450 500
550 600
V C E - Volts
Fig. 17. Maxim um Trans ient The rm al Res istance
1.4 1.2
R ( t h ) J C - ( C / W )
1 0.8 0.6 0.4 0.2 0 0.1 1 1 0 1 00 1 000
Pulse Width - milliseconds
IXSA 10N60B2D1 IXSP 10N60B2D1
30 A 25 IF TVJ = 150C 20 15 10 5 0 TVJ = 25C 0 1 2 VF 3 V 50 2 TVJ = 100C 250 nC 200 Qr 150 TVJ = 100C VR = 300 V IRM IF = 5 A IF = 10 A IF = 20 A 100 4 TVJ = 100C VR = 300 V 10 A 8 IF = 5 A IF = 10 A IF = 20 A
6
0 100
A/s 1000 -diF/dt
0
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 18. Forward current IF versus VF
Fig. 19. Reverse recovery charge Qr versus -diF/dt
ns 100 TVJ = 100C VR = 300 V VFR 80 IF = 5 A IF = 10 A IF = 20 A 60
Fig. 20. Peak reverse current IRM versus -diF/dt
60 V TVJ = 100C IF = 10 A 0.3 s tfr
2.0
1.5 Kf 1.0 IRM 0.5 Qr 0.0
trr
40
0.2
20 VFR
tfr
0.1
40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.0 600 A/s 1000 800 diF/dt
0
40
Fig. 21. Dynamic parameters Qr, IRM versus TVJ
10 K/W 1 ZthJC 0.1
Fig. 22. Recovery time trr versus -diF/dt
Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.5578 0.4931 ti (s) 0.0052 0.0003 0.0169
0.01
0.001 0.00001
DSEP 8-06B
0.0001
0.001
0.01
0.1
s t
1
Fig. 24. Transient thermal resistance junction-to-case
NOTE: Fig. 19 to Fig. 23 shows typical values
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2

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